View FDMS8670S_1099801.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDMS8670S N-Channel PowerTrench(R) SyncFETTM
December 2006
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
30V, 42A, 3.5m Features
Max rDS(on) = 3.5m at VGS = 10V, ID = 20A Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant
tm
General Description
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Application
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification
Pin 1 S S
D
S G
5 6 7 8
4 3 2 1
G G G S
D D
D
D
D
D Power 56 (Bottom view)
D
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C Ratings 30 20 42 116 20 200 78 2.5 -55 to +150 W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W
Package Marking and Ordering Information
Device Marking FDMS8670S Device FDMS8670S Package Power 56 Reel Size 7'' Tape Width 12mm Quantity 3000 units
(c)2006 Fairchild Semiconductor Corporation FDMS8670S Rev.C1
1
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 50mA, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 17 500 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 50mA, referenced to 25C VGS = 10V, ID = 20A VGS = 4.5V, ID = 17A VGS = 10V, ID = 20A ,TJ = 125C VDS = 10V, ID = 20A 1 1.5 -2.8 2.8 3.6 3.9 98 3.5 5.0 6.0 S m 3 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V f = 1MHz f = 1MHz 3005 865 320 1.4 4000 1150 480 5.0 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(4.5V) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDS = 15V ID = 20A VDD = 15V, ID = 20A VGS = 10V, RGEN = 5 14 19 37 10 52 24 8 10 26 35 60 20 73 34 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2A IF = 20A, di/dt = 300A/s 0.4 26 24 0.7 42 39 V ns nC
Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper
2: Pulse time < 300s, Duty cycle < 2%.
FDMS8670S Rev.C1
2
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25C unless otherwise noted
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3.5V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
180
ID, DRAIN CURRENT (A)
4.0 3.5
VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
150 120 90 60
VGS = 10V VGS = 4.5V VGS = 4V
3.0 2.5 2.0
VGS = 4.5V VGS = 3.5V VGS = 4V
VGS = 3V
1.5 1.0
VGS = 10V
30 0 0 1 2 3 4
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 30 60 90 120 150 180
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
10
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 20A VGS = 10V
ID = 20A
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
8
6
TJ = 125oC
4
TJ = 25oC
2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
150
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
20 10
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
ID, DRAIN CURRENT (A)
120 90 60
TJ = 125oC TJ = 25oC
1
TJ = 125oC TJ = 25oC
0.1
TJ = -55oC
30
TJ = -55oC
0.01
0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4
1E-3 0.0
0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
0.7
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS8670S Rev.C1
3
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10 8
VDD = 10V
5000
Ciss
6
VDD = 15V VDD = 20V
CAPACITANCE (pF)
1000
Coss
4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60
f = 1MHz VGS = 0V
Crss
100 0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
120
40
IAS, AVALANCHE CURRENT(A)
ID, DRAIN CURRENT (A)
100
VGS = 10V
10
TJ = 25oC
80 60
VGS = 4.5V
TJ = 125oC
40 20
RJC = 1.6 C/W
o
Limited by Package
1 0.01
0.1 1 10 100 tAV, TIME IN AVALANCHE(ms)
1000
0 25 50 75 100
o
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
300
Figure 10. Maximum Continuous Drain Current vs Case Temperature
500
FOR TEMPERATURES
100
ID, DRAIN CURRENT (A)
100us
P(PK), PEAK TRANSIENT POWER (W)
10 1 0.1 0.01
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC
1ms 10ms 100ms 1s 10s DC
100
VGS = 10V
ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 TA = 25oC
10
SINGLE PULSE
1E-3 0.1
1
10
80
1 0.6 -3 10
10
-2
VDS, DRAIN to SOURCE VOLTAGE (V)
10 10 10 t, PULSE WIDTH (s)
-1
0
1
10
2
10
3
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS8670S Rev.C1
4
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics TJ = 25C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
SINGLE PULSE
1E-3 -3 10
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMS8670S Rev.C1
5
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
Typical Characteristics (continued)
SyncFET Schottky body diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A) IDSS, REVERSE LEAKAGE CURRENT (A) IDSS, REVERSE LEAKAGE CURRENT (A)
0.1 0.1 0.1
TA = 125oC oC TJ = 125 TJ = 125oC
0.01 0.01 0.01
CURRENT: 0.8A/Div
1E-3 1E-3 1E-3
TJ o 100 TA = J = =C oC C T 100100
o
1E-4 1E-4 1E-4
1E-5 1E-5 1E-50 0
o TJ = = 25oC T 25 C
J
TA = 25oC
5 5 5
TIME: 12.5nS/Div
VDS, REVERSEVOLTAGE (V) VDS, REVERSE VOLTAGE (V) VDS, REVERSE VOLTAGE (V)
10 10 10
15 15 15
20 20 20
25 25 30 30 25 30
Figure 14. FDMS8670S SyncFET Body Diode reverse recovery characteristics
Figure 15. SyncFET Body Diode reverse leakage vs drain to source voltage
FDMS8670S Rev.C1
6
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
FDMS8670S Rev.C1
7
www.fairchildsemi.com
FDMS8670S N-Channel PowerTrench(R) SyncFETTM
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDMS8670S Rev. C1
8
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDMS8670S

	To Download FDMS8670S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .